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参数资料
| 型号： | 2SD1266P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | SC-67, TO-220F-A1, FULL PACK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 241K |
| 代理商： | 2SD1266P |
Power Transistors
1
Publication date: April 2003
SJD00283BED
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
■ Features
High forward current transfer ratio h
FE which has satisfactory linearity
Low collector-emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T
a = 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD1266
VCBO
60
V
(Emitter open)
2SD1266A
80
Collector-emitter voltage 2SD1266
VCEO
60
V
(Base open)
2SD1266A
80
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
3A
Peak collector current
ICP
5A
Collector power
TC = 25°CPC
35
W
dissipation
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SD1266
VCEO
IC = 30 mA, IB = 060
V
(Base open)
2SD1266A
80
Base-emitter voltage
VBE
VCE = 4 V, IC = 3 A
1.8
V
Collector-emitter cutoff
2SD1266
ICES
VCE = 60 V, VBE = 0
200
A
current (E-B short)
2SD1266A
VCE
= 80 V, V
BE
= 0
200
Collector-emitter cutoff
2SD1266
ICEO
VCE = 30 V, IB = 0
300
A
current (Base open)
2SD1266A
VCE = 60 V, IB = 0
300
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 6 V, I
C
= 01
mA
Forward current transfer ratio
hFE1 *
VCE = 4 V, IC = 1 A
70
320
hFE2
VCE = 4 V, IC = 3 A
10
Collector-emitter saturation voltage
VCE(sat)
IC
= 3 A, I
B
= 0.375 A
1.2
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = 1 A, IB1 = 0.1 A, IB2 = 0.1 mA
0.5
s
Storage time
tstg
VCC
= 50 V
2.5
s
Fall time
tf
0.4
s
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
O
hFE1
70 to 150
120 to 250
160 to 320
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1266-P | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SD1266Q | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1266R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | SOT-186 |
| 2SD1267 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SD1267/2SD1267A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SD1267. 2SD1267A - NPN Transistor |
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