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参数资料
| 型号： | 2SD1277Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 241K |
| 代理商： | 2SD1277Q |
Power Transistors
1
Publication date: February 2003
SJD00191BED
2SD1277, 2SD1277A
Silicon NPN triple diffusion planar type darlington
For midium speed power switching
Complementary to 2SB0951, 2SB0951A
■ Features
High forward current transfer ratio h
FE
High-speed switching
Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD1277
VCBO
60
V
(Emitter open)
2SD1277A
80
Collector-emitter voltage 2SD1277
VCEO
60
V
(Base open)
2SD1277A
80
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
8A
Peak collector current
ICP
12
A
Collector power
TC
= 25°CP
C
45
W
dissipation
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SD1277
VCEO
IC = 30 mA, IB = 0
60V
(Base open)
2SD1277A
80
Collector-base cutoff
2SD1277
ICBO
VCB
= 60 V, I
E
= 0
100
A
current (Emitter open)
2SD1277A
VCB = 80 V, IE = 0
100
Emitter-base cutoff current (Collector open)
IEBO
VEB = 7 V, IC = 02
mA
Forward current transfer ratio
hFE1 *
VCE
= 3 V, I
C
= 4 A
1 000
10 000
hFE2
VCE = 3 V, IC = 8 A
500
Collector-emitter saturation voltage
VCE(sat)
IC = 4 A, IB = 8 mA
1.5
V
Base-emitter saturation voltage
VBE(sat)
IC
= 4 A, I
B
= 8 mA
2.0
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC = 2 A, IB1 = 8 mA, IB2 = 8 mA,
0.5
s
Storage time
tstg
VCC
= 50 V
4.0
s
Fall time
tf
1.0
s
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE1
1 000 to 2 500
2 000 to 5 000 4 000 to 10 000
Internal Connection
B
C
E
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
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|---|---|
| 2SD1277R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 8A I(C) | SOT-186 |
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| 2SD12800RL | 功能描述:TRANS NPN 20VCEO 1A MINI PWR RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD12800SL | 功能描述:TRANS NPN 20VCEO 1A MINI PWR RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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