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参数资料
| 型号： | 2SD1318R |
| 英文描述： | TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | 8A I(C) | TO-221VAR |
| 中文描述： | 晶体管|晶体管|达林顿|叩| 30V的五（巴西）总裁| 8A条一（c）|至221VAR |
| 文件页数： | 3/3页 |
| 文件大小： | 51K |
| 代理商： | 2SD1318R |
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
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there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-
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2001 MAR
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1319 | Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SD1319P | TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SD1319Q | Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SD1319R | TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SD1320 | Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1325 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR TO-220FA 50V 2A 35W BCE |
| 2SD1326 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR TO-220FA 50V 4A 40W BCE |
| 2SD1328 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD132800L | 功能描述:TRANS NPN LV AMP 20VCED MINI 3P RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD13280RL | 功能描述:TRANS NPN LV AMP 20VCEO MINI 3P RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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