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参数资料
| 型号： | 2SD1330T |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | M-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 204K |
| 代理商： | 2SD1330T |
Transistors
1
Publication date: November 2002
SJC00217BED
2SD1330
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Low ON resistance R
on
High forward current transfer ratio h
FE
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T
a = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
25
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
12
V
Collector current
IC
0.5
A
Peak collector current
ICP
1A
Collector power dissipation
PC
600
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 A, IE = 025
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 020
V
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 012
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 25 V, IE = 0
100
nA
Forward current transfer ratio *
1
hFE1 *
2
VCE = 2 V, IC = 0.5 A
200
800
hFE2
VCE = 2 V, IC = 1 A
60
Collector-emitter saturation voltage
VCE(sat)
IC = 0.5 A, IB = 20 mA
0.13
0.4
V
Base-emitter saturation voltage
VBE(sat)
IC = 0.5 A, IB = 50 mA
1.2
V
Transition frequency
fT
VCB
= 10 V, I
E
= 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
(Common base, input open circuited)
ON resistanse *
3
Ron
1
■ Electrical Characteristics T
a = 25°C ± 3°C
Unit: mm
6.9±0.1
2.5±0.1
(1.0)
(1.5)
(0.85)
0.45±0.05
0.55±0.1
(2.5)
21
3
R 0.7
R 0.9
(0.4)
3.5
±
0.1
4.5
±
0.1
4.1
±
0.2
2.4
±
0.2
1.25
±
0.05
2.0
±
0.2
1.0
±
0.1
(1.5)
1 : Base
2 : Collector
3 : Emitter
M-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
*3: Ron Measurement circuit
Rank
R
S
T
hFE1
200 to 350
300 to 500
400 to 800
VV
1 k
Ron
=
VB
× 1000 ()
VA
V
B
f
= 1 kHz
V
= 0.3 V
VB
IB
= 1 mA
VA
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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