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参数资料
| 型号： | 2SD1367-BB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/6页 |
| 文件大小： | 30K |
| 代理商： | 2SD1367-BB |
2SD1367
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
20
V
Collector to emitter voltage
V
CEO
16
V
Emitter to base voltage
V
EBO
6V
Collector current
I
C
2A
Collector peak current
i
C(peak)*
1
3A
Collector power dissipation
P
C*
2
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 ms, Duty cycle ≤ 20%.
2. Value on the alumina ceramic board (12.5
× 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
16
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
6—
—
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.1
AV
CB = 16 V, IE = 0
Emitter cutoff current
I
EBO
—
0.1
AV
EB = 5 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
500
V
CE = 2 V, IC = 0.1 A, Pulse
Collector to emitter saturation
voltage
V
CE(sat)
—
0.15
0.3
V
I
C = 1 A, IB = 0.1 A, Pulse
Base to emitter saturation
voltage
V
BE(sat)
—
0.9
1.2
V
I
C = 1 A, IB = 0.1 A, Pulse
Gain bandwidth product
f
T
—
100
—
MHz
V
CE = 2 V, IC = 10 mA
Collector output capacitance
Cob
—
20
—
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Note:
1. The 2SD1367 is grouped by h
FE as follows.
Mark
BA
BB
BC
h
FE
100 to 200
160 to 320
250 to 500
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1367-BC | SMALL SIGNAL TRANSISTOR |
| 2SD1367-BB | SMALL SIGNAL TRANSISTOR |
| 2SD1368-CC | SMALL SIGNAL TRANSISTOR |
| 2SD1368-CB | SMALL SIGNAL TRANSISTOR |
| 2SD1368CA | SMALL SIGNAL TRANSISTOR |
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