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参数资料
| 型号： | 2SD1411A |
| 英文描述： | Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
| 文件页数： | 1/3页 |
| 文件大小： | 63K |
| 代理商： | 2SD1411A |
1
Transistor
2SD1478, 2SD1478A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
I
Features
G
Forward current transfer ratio h
FE
is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: h
FE
= 4000 to 20000.
G
A shunt resistor is omitted from the driver.
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
5
750
500
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
2SD1478
2SD1478A
2SD1478
2SD1478A
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 500mA, I
B
= 0.5mA
*2
I
C
= 500mA, I
B
= 0.5mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
min
30
60
25
50
5
4000
typ
200
max
100
100
20000
2.5
3.0
Unit
nA
nA
V
V
V
V
V
MHz
*2
Pulse measurement
2SD1478
2SD1478A
2SD1478
2SD1478A
Unit: mm
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
Marking symbol :
2N
(2SD1478)
2O
(2SD1478A)
Internal Connection
B
C
E
*1
h
FE1
Rank classification
Rank
Q
R
h
FE1
4000 ~ 10000 8000 ~ 20000
2SD1478
2NQ
2NR
2SD1478A
2OQ
2OR
Marking
Symbol
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1411AO | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7A I(C) | TO-220AB |
| 2SD1411AY | Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
| 2SD1412 | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7A I(C) | TO-220VAR |
| 2SD1412A | Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
| 2SD1412AO | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7A I(C) | TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1411A-O(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 80V 7A 3-Pin(3+Tab) TO-220NIS |
| 2SD1411A-Y(F) | 制造商:Toshiba 功能描述:NPN 80V 7A 120 to 240 TO220NIS Bulk |
| 2SD1413 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR2-10L1A 60V 3A 25W BCE |
| 2SD1414 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR2-10L1A 10V 4A 30W BCE |
| 2SD1415A(F) | 制造商:Toshiba 功能描述:NPN 100V 7A 2000 to 15000 TO220NIS Bulk 制造商:Toshiba 功能描述:Trans Darlington NPN 100V 7A 3-Pin(3+Tab) TO-220NIS |
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