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参数资料
| 型号： | 2SD1412A |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10R1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 159K |
| 代理商： | 2SD1412A |
2SD1412A
2006-11-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD1412A
High-Current Switching Applications
Power Amplifier Applications
Low saturation voltage: VCE (sat) = 0.4 V (max) at IC = 4 A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
70
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
7
A
Base current
IB
1
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
30
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1413 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR2-10L1A 60V 3A 25W BCE |
| 2SD1414 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR2-10L1A 10V 4A 30W BCE |
| 2SD1415A(F) | 制造商:Toshiba 功能描述:NPN 100V 7A 2000 to 15000 TO220NIS Bulk 制造商:Toshiba 功能描述:Trans Darlington NPN 100V 7A 3-Pin(3+Tab) TO-220NIS |
| 2SD1416 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR2-10L1A 80V 7A 40W BCE |
| 2SD1418DB(TR-E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 80V 1A 4-Pin(3+Tab) UPAK T/R |
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