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参数资料
| 型号： | 2SD1436(K) |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 143K |
| 代理商： | 2SD1436(K) |
2SD1436(K)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
120
V
Collector to emitter voltage
V
CEO
120
V
Emitter to base voltage
V
EBO
7V
Collector current
I
C
10
A
Collector peak current
I
C (peak)
15
A
Collector power dissipation
P
C*
1
80
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
120
—
V
I
C = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
VI
E = 200 mA, IC = 0
Collector cutoff current
I
CBO
—
100
AV
CB = 120 V, IE = 0
I
CEO
——
10
AV
CE = 100 V, RBE = ∞
DC current transfer ratio
h
FE
1000
—
20000
V
CE = 3 V, IC = 5 A*
1
Collector to emitter saturation
V
CE (sat)1
—
1.5
V
I
C = 5 A, IB = 10 mA*
1
voltage
V
CE (sat)2
—
3.0
V
I
C = 10 A, IB = 0.1 A*
1
Base to emitter saturation
V
BE (sat)1
—
2.0
V
I
C = 5 A, IB = 10 mA*
1
voltage
V
BE (sat)2
—
3.5
V
I
C = 10 A, IB = 0.1 A*
1
Turn on time
Ton
—
0.8
—
sI
C = 5 A, IB1 = –IB2 = 10 mA
Turn off time
Toff
—
4.0
—
s
Note:
1. Pulse test.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1436K(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1439 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1439PLB | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1439RL | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1441 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR 1500V 4A 80W BCE |
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