- 您现在的位置：买卖IC网 > PDF目录33428 > 2SD1475 (PANASONIC CORP) 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220F PDF资料下载
参数资料
| 型号： | 2SD1475 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220F |
| 封装： | TO-220, FULL PACK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 171K |
| 代理商： | 2SD1475 |
1
Power Transistors
2SD1475
Silicon NPN triple diffusion planar type
For power switching
s Features
q
High-speed switching
q
Satisfactory linearity of foward current transfer ratio hFE
q
Large collector power dissipation PC
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
80
60
6
8
4
1
35
2
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
Conditions
VCB = 80V, IE = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 1A
IC = 2A, IB = 0.2A
VCE = 12V, IC = 0.2A, f = 10MHz
IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V
min
60
70
20
typ
50
0.35
1
0.3
max
100
320
1.2
1
Unit
A
V
MHz
s
*h
FE1 Rank classification
Rank
Q
P
O
hFE1
70 to 150
120 to 250
160 to 320
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±0.2
5.5
±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder
Dip
4.0
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
4.2
±0.2
φ3.1±0.1
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1478R | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SD1478Q | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SD1481-M | 2 A, 70 V, NPN, Si, POWER TRANSISTOR |
| 2SD1481-K | 2 A, 70 V, NPN, Si, POWER TRANSISTOR |
| 2SD1481-L | 2 A, 70 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1476 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB |
| 2SD1477 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR M-TYPE 30V .1A .4W BCE |
| 2SD1478 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATS. TRANS. SC-5930V .5A .2W ECB SURFACE MOUNT |
| 2SD1478ARL | 功能描述:TRANS NPN 50VCEO 50MA MINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD1479 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR SC-65 1500V 2A 80W BCE |
发布紧急采购，3分钟左右您将得到回复。