参数资料
型号: 2SD1481-L-AZ
元件分类: 功率晶体管
英文描述: 2 A, 70 V, NPN, Si, POWER TRANSISTOR
文件页数: 1/4页
文件大小: 127K
代理商: 2SD1481-L-AZ
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1998
Document No. D16189EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD1481
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
FEATURES
On-chip C-to-B Zener diode for surge voltage absorption
Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A)
Ideal for use in a direct drive from IC to the devices such as OA
and FA equipment and motor solenoid relay printer head drivers
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
±10
V
Collector to emitter voltage
VCEO
60
±10
V
Emitter to base voltage
VEBO
7.0
V
Collector current
IC(DC)
2.0
A
Collector current
IC(pulse)*4.0
A
Base current
IB(DC)
0.2
A
Total power dissipation
PT (Tc = 25
°C)
15
W
Total power dissipation
PT (Ta = 25
°C)
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
* PW
≤ 300
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
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