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参数资料
| 型号： | 2SD1588-M-AZ |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 102K |
| 代理商： | 2SD1588-M-AZ |
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1998
Document No. D13174EJ1V1DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD1588
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
'$7$ 6+((7
2002
FEATURES
Mold package that does not require an insulating board or
insulation bushing
Large current capacity in small dimension: IC(DC) = 7 A
Low collector saturation voltage: VCE(sat) = 0.5 V MAX. (@5 A)
Ideal for use in ramp drivers or inductance drivers
Complementary transistor: 2SB1097
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
7.0
A
Collector current (Pulse)
IC(pulse)*15
A
Base current (DC)
IB(DC)
3.5
A
Total power dissipation
PT (TC = 25
°C)
30
W
Total power dissipation
PT (TA = 25
°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 300
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
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ELECTRICAL CHARACTERISTICS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 80 V, IE = 0
10
A
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
10
A
DC current gain
hFE1**
VCE = 1.0 V, IC = 3 A
40
200
DC current gain
hFE2**
VCE = 1.0 V, IC = 5 A
20
Collector saturation voltage
VCE(sat)**
IC = 5 A, IB = 0.5 A
0.5
V
Base saturation voltage
VBE(sat)**
IC = 5 A, IB = 0.5 A
1.5
V
** Pulse test PW
≤ 350
s, duty cycle ≤ 2%/per pulsed
hFE CLASSIFICATION
Marking
M
L
K
hFE1
40 to 80
60 to 120
100 to 200
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| 2SD1588-AZ | 7 A, 60 V, NPN, Si, POWER TRANSISTOR |
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相关代理商/技术参数 |
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|---|---|
| 2SD1589 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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| 2SD16 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 100V 6A 80W BEC |
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