参数资料
型号: 2SD1592-K
元件分类: 功率晶体管
英文描述: 5 A, 300 V, NPN, Si, POWER TRANSISTOR
封装: PLASTIC PACKAGE-3
文件页数: 1/4页
文件大小: 89K
代理商: 2SD1592-K
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confirm that this is the latest version.
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1998
Document No. D16137EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SD1592
NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-VOLTAGE LOW-SPEED SWITCHING
DATA SHEET
2002
FEATURES
High DC current gain due to Darlington connection
Low collector saturation
Reverse deterrence type
Ideal for use in devices such as pulse motor drivers and relay
drivers of PC terminals, and ignitors of general-purpose engines.
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCEO
+300,
10
V
Emitter to base voltage
VEBO
10
V
Collector current
IC(DC)
5.0
A
Collector current
IC(pulse)*10
A
Base current
IB(DC)
0.5
A
Total power dissipation
PT (Tc = 25
°C)
30
W
Total power dissipation
PT (Ta = 25
°C)
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 300
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
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