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参数资料
| 型号： | 2SD1600 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 37K |
| 代理商： | 2SD1600 |
2SD1572, 2SD1600
2
Electrical Characteristics (Ta = 25°C)
2SD1572
2SD1600
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit Test conditions
Collector to emitter
breakdown voltage
V
(BR)CEO
60
—
80
—
V
I
C = 25 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
7—
—
7
—
V
I
E = 50 mA, IC = 0
Collector cutoff current
I
CBO
—
100
—
100
A
V
CB = 60 V, IE = 0
I
CEO
——10
A
V
CE = 50 V, RBE = ∞
DC current tarnsfer
ratio
h
FE
1000 —
20000
1000 —
20000
V
CE = 3 V, IC = 4 A*
1
Collector to emitter
V
CE(sat)1
—
1.5
—
1.5
V
I
C = 4 A, IB = 8 mA*
1
saturation voltage
V
CE(sat)2
—
3.0
—
3.0
V
I
C = 8 A, IB = 80
mA*
1
Base to emitter
V
BE(sat)1
—
2.0
—
2.0
V
I
C = 4 A, IB = 8 mA*
1
saturation voltage
V
BE(sat)2
—
3.5
—
3.5
V
I
C = 8 A, IB = 80
mA*
1
Turn on time
t
on
—
0.5
—
0.5
—
s
I
C = 4 A,
Storage time
t
stg
—
6.0
—
6.0
—
s
I
B1 = –IB2 = 8 mA
Fall time
t
f
—
1.5
—
1.5
—
s
Note:
1. Pulse test.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1572 | 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1604 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1604 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1605 | 3 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1605 | 3 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1601 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 60V 4A 40W BCE |
| 2SD161 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 120V 10A 100W BEC |
| 2SD1614-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 20V 2A 4-Pin(3+Tab) Power Mini-Mold T/R |
| 2SD1614-T1-AZ(XK) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD1614-T1-AZ(XL) | 制造商:Renesas Electronics 功能描述:NPN |
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