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参数资料
| 型号： | 2SD1605 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 35K |
| 代理商： | 2SD1605 |
2SD1605
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
120
—
V
I
C = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
V
I
E = 50 mA, IC = 0
Collector cutoff current
I
CBO
—
100
A
V
CB = 120 V, IE = 0
I
CEO
——10
A
V
CE = 100 V, RBE = ∞
DC current transfer ratio
h
FE
1000
—
20000
V
CE = 3 V, IC = 1.5 A
Collector to emitter saturation
V
CE(sat)1
—
1.5
V
I
C = 1.5 A, IB = 3 mA*
1
voltage
V
CE(sat)2
—
3.0
V
I
C = 3 A, IB = 30 mA*
1
Base to emitter saturation
V
BE(sat)1
—
2.0
V
I
C = 1.5 A, IB = 3 mA*
1
voltage
V
BE(sat)2
—
3.5
V
I
C = 3 A, IB = 30 mA*
1
C to E diode forward voltage
V
D
—
3.0
V
I
D = 3 A*
1
Turn on time
t
on
—
0.7
—
s
I
C = 1.5 A, IB1 = –IB2 = 3 mA
Storage time
t
stg
—
7.0
—
s
Fall time
t
f
—
1.0
—
s
Note:
1. Pulse test.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1610D | 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR |
| 2SD1609C | 0.1 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 2SD1609D | 0.1 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 2SD1610B | 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR |
| 2SD1610 | 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD161 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 120V 10A 100W BEC |
| 2SD1614-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 20V 2A 4-Pin(3+Tab) Power Mini-Mold T/R |
| 2SD1614-T1-AZ(XK) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD1614-T1-AZ(XL) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD1615A-GP-T1-AZ | 制造商:Renesas Electronics 功能描述:Bipolar Power Power Mini-Mold Tape & Reel 制造商:Renesas 功能描述:0 |
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