参数资料
型号: 2SD1609C
元件分类: 功率晶体管
英文描述: 0.1 A, 160 V, NPN, Si, POWER TRANSISTOR
封装: TO-126MOD, 3 PIN
文件页数: 2/6页
文件大小: 28K
代理商: 2SD1609C
2SD1609, 2SD1610
2
Electrical Characteristics (Ta = 25°C)
2SD1609
2SD1610
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
160
200
V
I
C = 10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
160
200
V
I
C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5—
5
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
——10—
AV
CB = 140 V, IE = 0
———
10
V
CB = 160 V, IE = 0
DC current tarnsfer ratio h
FE1*
1
60
320
60
320
V
CE = 5 V, IC = 10 mA
h
FE2
30
30
V
CE = 5 V, IC = 1 mA
Base to emitter voltage
V
BE
1.5
1.5
V
CE = 5 V, IC = 10 mA
Collector to emitter
saturation voltage
V
CE(sat)
——2
2
V
I
C = 30 mA, IB = 3 mA
Gain bandwidth product f
T
140
140
MHz
V
CE = 5 V, IC = 10 mA
Collector output
capacitance
Cob
3.8
3.8
pF
V
CB = 10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SD1609 and 2SD1610 are grouped by h
FE1 as follows.
BC
D
60 to 120
100 to 200
160 to 320
Maximum Collector Dissipation
Curve
1.5
1.0
0.5
0
50
100
150
Ambient temperature Ta (
°C)
Collector
power
dissipation
P
C
(W)
Typical Output Characteristics
20
16
12
8
4
02
4
Collector to emitter voltage VCE (V)
10
8
6
Collector
current
I
C
(mA)
IB = 0
10
A
20
30
40
60
70
80
90
100
110
120
50
相关PDF资料
PDF描述
2SD1609D 0.1 A, 160 V, NPN, Si, POWER TRANSISTOR
2SD1610B 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR
2SD1610 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR
2SD1614XL 2 A, 20 V, NPN, Si, POWER TRANSISTOR
2SD1614 2 A, 20 V, NPN, Si, POWER TRANSISTOR
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