参数资料
型号: 2SD1609D
元件分类: 功率晶体管
英文描述: 0.1 A, 160 V, NPN, Si, POWER TRANSISTOR
封装: TO-126MOD, 3 PIN
文件页数: 3/6页
文件大小: 28K
代理商: 2SD1609D
2SD1609, 2SD1610
3
100
50
20
10
5
2
1
0
0.2
Collector
current
I
C
(mA)
0.4
Base to emitter voltage VBE (V)
0.6
1.0
0.8
Typical Transfer Characteristics
VCE = 5 V
Ta
=
75
°C
–25
25
500
200
100
50
20
10
5
1
2
20
100
10
50
DC
current
transfer
ratio
h
FE
5
Collector current IC (mA)
VCE = 5 V
Pulse
DC Current Transfer Ratio vs.
Collector Current
Ta = 75
°C
25
–25
Saturation Voltage vs. Collector Current
IC = 10 IB
Pulse
5
2
1.0
0.5
0.2
0.1
0.05
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V)
12
10
Collector current IC (mA)
550
20
100
VBE(sat)
VCE(sat)
Ta = –25°C
Ta = –25
°C
25
75
25
Gain Bandwidth Product vs.
Collector Current
500
200
100
50
20
10
5
1.0
0.5
2
Collector current IC (mA)
20
10
50
5
Gain
bandwidth
product
f
T
(MHz)
VCE = 10 V
相关PDF资料
PDF描述
2SD1610B 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR
2SD1610 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR
2SD1614XL 2 A, 20 V, NPN, Si, POWER TRANSISTOR
2SD1614 2 A, 20 V, NPN, Si, POWER TRANSISTOR
2SD1614XK 2 A, 20 V, NPN, Si, POWER TRANSISTOR
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