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参数资料
| 型号： | 2SD1615AGP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | POWER, PLASTIC, SC-62, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 92K |
| 代理商： | 2SD1615AGP |
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SILICON TRANSISTOR
2SD1615, 1615A
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DATA SHEET
Document No. D10198EJ5V0DS00 (5th edition)
Date Published March 2006 NS CP(K)
Printed in Japan
c
1985
DESCRIPTION
2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid
Integrated Circuits.
FEATURES
Low VCE (sat) VCE(sat) = 0.15 V
Complement to 2SB1115, 1115A
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
2SD1615 2SD1615A
Collector to Base Voltage
VCBO
60
120
V
Collector to Emitter Voltage
VCEO
50
60
V
A
Emitter to Base Voltage
VEBO
6.0
Collector Current (DC)
IC (DC)
1.0
Collector Current (Pulse)
IC (Pulse)
2.0
Total Power Dissipation
PT
2.0
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55 to +150
°C
PW ≤ 10 ms, Duty Cycle ≤ 50%
When mounted on ceramic substrate of 16 cm2 × 0.7 mm
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
100
nA
2SD1615
VCB = 60 V, IE = 0
100
nA
2SD1615A
VCB = 120 V, IE = 0
Emitter Cutoff Current
IEBO
100
nA
VEB = 6.0 V, IC = 0
DC Current Gain
hFE1
135
290
600
2SC1615
VCE = 2.0 V, IC = 100 mA
135
400
2SD1615A
DC Current Gain
hFE2
81
270
VCE = 2.0 V, IC = 1.0 A
Collector Saturation Voltage
VCE(sat)
0.15
0.3
V
IC = 1.0 A, IB = 50 mA
Base Saturation Voltage
VBE(sat)
0.9
1.2
V
IC = 1.0 A, IB = 50 mA
Base to Emitter Voltage
VBE
600
700
mV
VCE = 2.0 V, IC = 50 mA
Gain Bandwidth Product
fT
80
160
MHz
VCE = 2.0 V, IE =
100 mA
Output Capacitance
Cob
19
pF
VCB = 10 V, IE = 0, f = 1.0 MHz
Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2 %
hFE Classification
MARKING
2SD1615
GM
GL
GK
2SD1615A
GQ
GP
hFE1
135 to 270
200 to 400
300 to 600
PACKAGE DIMENSIONS
in millimeters
C
EB
4.5
±0.1
1.6
±0.2
0.42
±0.06
0.42
±0.06
1.5
±0.1
2.5
±0.1
0.8
MIN.
4.0
±0.25
1.5
3.0
0.41
+0.03
0.05
E. Emitter
C. Collector
B. Base
0.47
±0.06
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1615A-GP-T1-AZ | 制造商:Renesas Electronics 功能描述:Bipolar Power Power Mini-Mold Tape & Reel 制造商:Renesas 功能描述:0 |
| 2SD1615A-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,1.0A,P-MINIMOLD3 制造商:Renesas 功能描述:Trans GP BJT NPN 50V 1A 4-Pin(3+Tab) Power Mini-Mold T/R |
| 2SD1615A-T1-AZ(GP) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD1615A-T1-AZ(GQ) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD1615-AZ | 制造商:Renesas Electronics 功能描述:Bipolar Power Power Mini-Mold Bulk 制造商:Renesas 功能描述:Trans GP BJT NPN 50V 1A 4-Pin(3+Tab) Power Mini-Mold |
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