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参数资料
| 型号： | 2SD1616K |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | SC-43B, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 229K |
| 代理商： | 2SD1616K |
1
Transistor
2SD892, 2SD892A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
s Features
q
Forward current transfer ratio hFE is designed high, which is ap-
propriate to the driver circuit of motors and printer hammer: hFE
= 4000 to 20000.
q
A shunt resistor is omitted from the driver.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±0.2
4.0
±0.2
5.1
±0.2
13.5
±0.5
0.45
+0.2
–0.1
0.45
+0.2
–0.1
1.27
2.3
±0.2
2.54
±0.15
2
13
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
30
60
25
50
5
0.75
0.5
400
150
–55 ~ +150
Unit
V
A
mW
C
2SD892
2SD892A
2SD892
2SD892A
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
ICBO
IEBO
VCBO
VCEO
VEBO
hFE
*1
VCE(sat)
VBE(sat)
fT
Conditions
VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100A, IE = 0
IC = 1mA, IB = 0
IE = 100A, IC = 0
VCE = 10V, IC = 500mA
*2
IC = 500mA, IB = 0.5mA
*2
IC = 500mA, IB = 0.5mA
*2
VCB = 10V, IE = –50mA, f = 200MHz
min
30
60
25
50
5
4000
typ
150
max
100
20000
2.5
3
Unit
nA
V
MHz
Internal Connection
B
C
E
≈200
2SD892
2SD892A
2SD892
2SD892A
*2 Pulse measurement
*1h
FE Rank classification
Rank
Q
R
hFE
4000 ~ 10000 8000 ~ 20000
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1616-K (AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1616-L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1618 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-6220V .7A .5W ECB SURFACE MOUNT |
| 2SD1618S-TD-E | 功能描述:两极晶体管 - BJT BIP NPN 0.7A 15V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1618T-TD-E | 功能描述:两极晶体管 - BJT BIP NPN 0.7A 15V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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