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参数资料
| 型号： | 2SD1623T |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PCP, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 33K |
| 代理商： | 2SD1623T |
2SB1123 / 2SD1623
No.1727-1/5
Applications
Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
The ultraminiature package facilitates
higher-density mounting, thus allows the applied
hybrid IC’s further miniaturization.
Specifications
( ) : 2SB1123
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)60
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)2
A
Collector Current (Pulse)
ICP
(--)4
A
Collector Dissipation
PC
0.5
W
Mounted on a ceramic board (250mm2!0.8mm)
1.3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)50V, IE=0
(--)100
nA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)100
nA
DC Current Gain
hFE(1)
VCE=(--)2V, IC=(--)100mA
100*
560*
hFE(2)
VCE=(--)2V, IC=(--)1.5A
40
* : The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows :
Continued on next page.
Rank
R
S
T
U
hFE
100 to 200 140 to 280 200 to 400 280 to 560
Marking 2SB1123 : BF
2SD1623 : DF
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN1727D
2SB1123 / 2SD1623
Package Dimensions
unit : mm
2038A
[2SB1123 / 2SD1623]
N1501 TS IM / 92098 HA (KT) / 4107 KI / N275 KI / 3045 MW, TS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
4.5
1.6
0.5
0.4
1.5
1.0
2.5
4.25max
3.0
1.5
0.4
0.75
3
2
1
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
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PDF描述 |
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| 2SD1668-Q | 7 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1668-R | 7 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1668R | 7 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
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| 2SB1135R | 7 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1623T-TD | 制造商:SANYO Semiconductor Co Ltd 功能描述: |
| 2SD1623T-TD-E | 功能描述:两极晶体管 - BJT BIP NPN 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1624 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1624-S | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1624S-TD-E | 功能描述:两极晶体管 - BJT BIP NPN 3A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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