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参数资料
| 型号： | 2SD1624 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PCP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 96K |
| 代理商： | 2SD1624 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High Current Switching Applications
Ordering number:ENN2019A
2SB1124/2SD1624
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1003TN (KOTO)/92098HA (KT)/3307AT, TS No.2019—1/4
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( ) : 2SB1124
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2038A
[2SB1124/2SD1624]
Applications
Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Mounted on ceramic board (250mm
2×0.8mm)
* ; The 2SB1124/2SD1624 are classified by 100mA hFE as follows :
Marking 2SB1124 : BG
Continued on next page.
2SD1624 : DG
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相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1624T | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1624S | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1624-S | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1624S-TD-E | 功能描述:两极晶体管 - BJT BIP NPN 3A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1624S-TD-H | 功能描述:两极晶体管 - BJT BIP NPN 3A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1624T-TD-E | 功能描述:TRANS NPN BIPOLAR PCP RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD1624T-TD-H | 功能描述:两极晶体管 - BJT BIP NPN 3A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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