参数资料
型号: 2SD1681Q
元件分类: 功率晶体管
英文描述: 1.2 A, 18 V, NPN, Si, POWER TRANSISTOR, TO-126
封装: TO-126ML, 3 PIN
文件页数: 1/4页
文件大小: 168K
代理商: 2SD1681Q
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft
’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
18V/1.2A Switching Applications
Ordering number:ENN2020A
2SB1141/2SD1681
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2003TN (KOTO)/92098HA (KT)/4107KI/4046KI No.2020–1/4
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( ) : 2SB1141
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2042B
[2SB1141/2SD1681]
Applications
Converters, relay drivers, low-voltage and high
power AF Amplifier.
Features
Low saturation voltage and excellent linearity of hFE.
Wide ASO.
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Tc=25C
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* : The 2SB1141/2SD1681 are classified by 100mA hFE as follows :
Continued on next page.
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23
相关PDF资料
PDF描述
2SD1681S 1.2 A, 18 V, NPN, Si, POWER TRANSISTOR, TO-126
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