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参数资料
| 型号： | 2SD1691-L |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封装： | TO-126, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 230K |
| 代理商： | 2SD1691-L |
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Document No. D16190EJ1V1DS00 (1st edition)
Date Published December 2004 NS CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD1691
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
FEATURES
Large current capacity and low VCE(sat):
IC(DC) = 5.0 A, IC(pulse) = 8.0 A
VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A)
Large power dissipation TO-126 type power transistor
PT = 1.3 W (@Ta = 25
°C), 20 W (@Tc = 25°C)
Complementary transistor: 2SB1151
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
5.0
A
Collector current (pulse)
IC(pulse)*
8.0
A
Base current (DC)
IB(DC)
1.0
A
Total power dissipation
PT (Ta = 25
°C)
1.3
W
Total power dissipation
PT (Tc = 25
°C)
20
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
* PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25
°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 50 V, IE = 0
10
A
Emitter cutoff current
IEBO
VEB = 7.0 V, IC = 0
10
A
DC current gain
hFE1**
VCE = 1.0 V, IC = 0.1 A
60
DC current gain
hFE2**
VCE = 1.0 V, IC = 2.0 A
100
400
DC current gain
hFE3**
VCE = 1.0 V, IC = 5.0 A
50
Collector saturation voltage
VCE(sat)**
IC = 2.0 A, IB = 0.2 A
0.1
0.3
V
Base saturation voltage
VBE(sat)**
IC = 2.0 A, IB = 0.2 A
0.9
1.2
V
Turn-on time
ton
0.2
1.0
s
Storage time
tstg
1.1
2.5
s
Fall time
tf
IC = 2.0 A, IB1 =
IB2 = 0.2 A
RL = 5.0
, VCC 10 V
0.2
1.0
s
** Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
160 to 320
200 to 400
相关PDF资料 |
PDF描述 |
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| 2SD1691 | 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD1692-K | 3 A, 100 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD1692 | 3 A, 100 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD1698-AZ | 800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD1698-AZ | 800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1691-M-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1692-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1694-AZ/L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1694-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1694-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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