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参数资料
| 型号： | 2SD1693-K |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 70 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封装： | TO-126, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 231K |
| 代理商： | 2SD1693-K |
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FEATURES
On-chip Zener diode
High DC current gain due to Darlington connection
Large current capacity and low VCE(sat)
Large power dissipation TO-126 type power transistor
Complementary transistor: 2SB1150
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
±10
V
Collector to emitter voltage
VCEO
60
±10
V
Emitter to base voltage
VEBO
8.0
V
Collector current (DC)
IC(DC)
±3.0
A
Collector current (pulse)
IC(pulse)*
±5.0
A
Total power dissipation
PT (TA = 25
°C)
1.3
W
Total power dissipation
PT (TC = 25
°C)
15
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
(OHFWURGH&RQQHFWLRQ
ELECTRICAL CHARACTERISTICS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to base voltage
VCBO
IC = 1.0 mA, IE = 0
506070
V
Collector to emitter voltage
VCEO
IC = 10 mA, RBE =
∞
50
60
70
V
Collector to emitter voltage
VCEO(SUS)
IC = 3.0 A, IB = 3.0 mA, L = 1.0 mH
50
V
Collector cutoff current
ICBO
VCB = 40 V, IE = 0
10
A
Collector cutoff current
ICEO
VCE = 40 V, RBE =
∞
1.0
mA
DC current gain
hFE1**
VCE = 2.0 V, IC = 1.5 A
2,000
20,000
DC current gain
hFE2**
VCE = 2.0 V, IC = 3.0 A
1,000
Collector saturation voltage
VCE(sat)**
IC = 1.5 A, IB = 1.5 mA
0.9
1.2
V
Base saturation voltage
VBE(sat)**
IC = 1.5 A, IB = 1.5 mA
1.5
2.0
V
Turn-on time
ton
0.5
s
Storage time
tstg
2.0
s
Fall time
tf
IC = 1.5 A
IB1 =
IB2 = 1.5 mA
RL = 27
, VCC 40 V
1.0
s
** Pulse test PW
≤ 350
s, duty cycle ≤ 2%/per pulsed
hFE CLASSIFICATION
Marking
M
L
K
hFE1
2,000 to 5,000
4,000 to 12,000
3,000 to 20,000
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1693 | 3 A, 70 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD1693-M | 3 A, 70 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD1693-L | 3 A, 70 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD1693L | 3 A, 70 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD1693K | 3 A, 70 V, NPN, Si, POWER TRANSISTOR, TO-126 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1694-AZ/L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1694-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1694-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1694-M-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1697 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SP-8 100V .8A 1W ECB |
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