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参数资料
| 型号： | 2SD1758TLR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CPT3, SC-63, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 151K |
| 代理商： | 2SD1758TLR |
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2010 ROHM Co., Ltd. All rights reserved.
2010.04 - Rev.C
Medium power transistor (32V, 2A)
2SD1758 / 2SD1862
Features
Dimensions (Units : mm)
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1182 / 2SB1240
Structure
Epitaxial planar type NPN silicon transistor
Absolute maximum ratings (Ta=25
C)
2SD1758
2SD1862
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector
power
dissipation
1 Single pulse, PW=20ms
2 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager.
Parameter
Symbol
Limits
Unit
VCBO
40
V
VCEO
32
V
VEBO
5V
IC
2
A (DC)
2.5
A (Pulse)
1
Tj
150
°C
Tstg
55 to +150
°C
PC
1W
2
10
W (TC
=25°C)
Electrical characteristics (Ta=25
C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
40
32
5
0.5
100
30
1
0.8
390
VIC
=50μA
IC
=1mA
IE
=50μA
VCB
=20V
VEB
=4V
IC/IB
=2A/0.2A
VCE
=5V, IE=50mA, f=100MHz
VCE
=3V, IC=0.5A
VCB
=10V, IE=0A, f=1MHz
V
μA
V
MHz
pF
Typ.
Max.
Unit
Conditions
120
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
0.1
+0.2
0.1
+0.2
+
0.3
0.1
2.3
±0.2
2.3
±0.2
0.65
±0.1
0.9
0.75
1.0
±0.2
0.55
±0.1
9.5
±
0.5
5.5
1.5
±
0.3
2.5
1.5
2.3
0.5
±0.1
6.5
±0.2
5.1
C0.5
(3)
(2)
(1)
0.9
1.0
6.8
±0.2
2.5
±0.2
1.05
0.45
±0.1
2.54 2.54
0.5
±0.1
0.9
4.4
±
0.2
14.5
±
0.5
(1)
(2)
(3)
0.65Max.
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
2SD1758
2SD1862
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