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参数资料
| 型号： | 2SD1760TLQ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-63, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 91K |
| 代理商： | 2SD1760TLQ |
2SD1760 / 2SD1864
Transistors
!
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
Min.
60
50
5
82
390
0.5
90
40
1
VIC
=50A
IC
=1mA
IE
=50A
VCB
=40V
VEB
=4V
VCE
=3V, IC=0.5A
VCE
=5V, IE=500mA, f=30MHz
IC/IB
=2A/0.2A
VCB
=10V, IE=0A, f=1MHz
V
A
V
MHz
pF
Typ.
Max.
Unit
Conditions
Measured using pulse current.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
!
Packaging specifications and hFE
Package
Taping
Code
2SD1760
Type
TL
2500
hFE
TV2
2500
2SD1864
PQR
Basic ordering
unit (pieces)
hFE values are classified as follows:
Item
hFE
R
180~390
Q
120~270
P
82~180
!
Electrical characteristic curves
COLLECTOR
CURRENT
:
I
C
(A)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1 Grounded emitter propagation
characteristics
0
10
0.01
2
5
1
0.2
0.5
0.1
0.02
0.05
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VCE =
3V
25
°C
25°C
Ta = 100
°C
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (
Ι )
0
123
45
0
0.5
1.0
1.5
2.0
2.5
3.0
15mA
20mA
25mA
30mA
35mA
40mA
50mA
10mA
5mA
IB = 0mA
45mA
Ta = 25
°C
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.3 Grounded-emitter output
characteristics(
ΙΙ )
0
102030
4050
0
0.5
1.0
1.5
2.0
2.5
3.0
Ta = 25
°C
50mA
45mA
40mA
35mA
30mA
25mA
15mA
10mA
PC = 15W
IB = 5mA
20mA
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
Fig.4 DC current gain vs.
collector current(
Ι )
0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
1000
500
200
100
50
20
10
5
2
1
Ta = 25
°C
10
VCE = 5V
3V
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
Fig.5 DC current gain vs.
collector curren(
ΙΙ )
0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
10
1000
500
200
100
50
20
10
5
2
1
VCE
= 3V
Ta = 100
°C
25°C
25
°C
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(A)
Fig.6 Collector-emitter saturation
voltage vs. collector current
0.010.02 0.05 0.1 0.2
0.5
1
2
5
10
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
Ta = 25
°C
IC/IB = 50
20
10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1760TLR | 功能描述:两极晶体管 - BJT NPN 50V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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| 2SD1762DE | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1762DEF | 制造商:Panasonic Industrial Company 功能描述:TRANSISTORSUB: KTC2026 |
| 2SD1762E | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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