- 您现在的位置：买卖IC网 > PDF目录33431 > 2SD1772AQ (PANASONIC CORP) 1 A, 180 V, NPN, Si, POWER TRANSISTOR, TO-220AB PDF资料下载
参数资料
| 型号： | 2SD1772AQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 180 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | SC-67, TO-220F-A1, FULL PACK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 202K |
| 代理商： | 2SD1772AQ |
Power Transistors
1
Publication date: April 2003
SJD00229BED
2SD1772, 2SD1772A
Silicon NPN triple diffusion planar type
For power amplification
For TV vertical deflection output
■ Features
Large collector power dissipation P
C
Full-pack package which can be installed to the heat sink with one
screw
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
60 to 140
100 to 240
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
200
V
Collector-emitter voltage 2SD1772
VCEO
150
V
(Base open)
2SD1772A
180
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
1A
Peak collector current
ICP
2A
Collector power dissipation
PC
25
W
Ta
= 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SD1772
VCEO
IC = 5 mA, IB = 0
150
V
(Base open)
2SD1772A
180
Emitter-base voltage (Collector open)
VEBO
IE
= 0.5 mA, I
C
= 06
V
Base-emitter voltage
VBE
VCE = 10 V, IC = 300 mA
1.0
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 200 V, IE = 050
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 4 V, I
C
= 050
A
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 100 mA
60
240
hFE2
VCE = 10 V, IC = 300 mA
50
Collector-emitter saturation voltage
VCE(sat)
IC
= 500 mA, I
B
= 50 mA
1.0
V
Transition frequency
fT
VCE = 10 V, IC = 0.1 A, f = 1 MHz
20
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
27
pF
(Common base, input open circuited)
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1772Q | 1 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1775AQ | 2 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1775AR | 2 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1777 | SMALL SIGNAL TRANSISTOR |
| 2SD1782KT146/PQ | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1773 | 功能描述:TRANS NPN 120VCEO 8A TO-220F RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD1774A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR |
| 2SD1776A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO220FA100V 2A 2W BCE |
| 2SD1776-P0 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1779-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。