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参数资料
| 型号： | 2SD1824GS |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, SMINI3-F2, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 281K |
| 代理商： | 2SD1824GS |
Transistors
1
Publication date: May 2007
SJC00376AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1824G
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
High forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
High emitter-base voltage (Collector open) V
EBO
S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
100
V
Collector-emitter voltage (Base open)
VCEO
100
V
Emitter-base voltage (Collector open)
VEBO
15
V
Collector current
IC
20
mA
Peak collector current
ICP
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 A, IE = 0
100
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
100
V
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 015
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 60 V, IE = 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 60 V, IB = 01
A
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 2 mA
400
1 200
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 1 mA
0.05
0.20
V
Transition frequency
fT
VCB = 10 V, IE = 2 mA, f = 200 MHz
90
MHz
■ Electrical Characteristics T
a = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE
400 to 800
600 to 1 200
■ Package
Code
SMini3-F2
Marking Symbol: 1V
Pin Name
1: Base
2: Emitter
3: Collector
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
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| 2SD1824GSL | 功能描述:TRANS NPN 100VCEO 20MA SMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD1824R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1826 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO220ML70V 7A 25W |
| 2SD1827 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220ML 70V 10A 30W BCE |
| 2SD1828 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-220ML 110V 3A 20W BCE |
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