参数资料
型号: 2SD1824S
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 20 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN
文件页数: 1/3页
文件大小: 237K
代理商: 2SD1824S
Transistors
1
Publication date: April 2003
SJC00230BED
2SD1824
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
High forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
High emitter-base voltage (Collector open) V
EBO
S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
100
V
Collector-emitter voltage (Base open)
VCEO
100
V
Emitter-base voltage (Collector open)
VEBO
15
V
Collector current
IC
20
mA
Peak collector current
ICP
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 A, IE = 0
100
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
100
V
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 015
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 60 V, IE = 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 60 V, IB = 01
A
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 2 mA
400
1 200
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 1 mA
0.05
0.20
V
Transition frequency
fT
VCB = 10 V, IE = 2 mA, f = 200 MHz
90
MHz
■ Electrical Characteristics T
a = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
2.1
±
0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25
±
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±
0.1
0.9
±
0.1
0
to
0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
10
°
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Rank
R
S
hFE
400 to 800
600 to 1 200
Marking symbol: 1V
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料
PDF描述
2SD1825 4 A, 60 V, NPN, Si, POWER TRANSISTOR
2SD1825 4 A, 60 V, NPN, Si, POWER TRANSISTOR
2SD1833/E 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220FP
2SD1833E 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220FP
2SD1833/F 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220FP
相关代理商/技术参数
参数描述
2SD1826 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO220ML70V 7A 25W
2SD1827 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220ML 70V 10A 30W BCE
2SD1828 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-220ML 110V 3A 20W BCE
2SD1829 制造商:SANYO 功能描述:NPN 100V 5A 1500 to - TO-220ML Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL NPN 100V 5A TO-220ML 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO220ML 110V 5A 25W BCE 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SD1832 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANS. TP-220FP80V 5A 30W BCE