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| 型号： | 2SD1843L |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 76K |
| 代理商： | 2SD1843L |
1998
Document No. D16200EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SD1843
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD1843 is a Darlington connection transistor with on-chip
dumper diode in collector to emitter and zener diode in collector to
base.
This transistor is ideal for use in acuator drives such as
motors, relays, and solenoids.
FEATURES
High DC current gain due to Darlington connection
High surge resistance due to on-chip protection elements:
C to E: Dumper diode
C to B: Zener diode
Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
±10
V
Collector to emitter voltage
VCEO
60
±10
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
±1.0
A
Collector current (pulse)
IC(pulse)*
±2.0
A
Total power dissipation
PT(Ta = 25°C)
1.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 40 V, IE = 0
0.5
A
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
1.0
″
mA
DC current gain
hFE2**
VCE = 2.0 V, IC = 0.2 A
1000
DC current gain
hFE2**
VCE = 2.0 V, IC = 0.5 A
2000
30000
Collector saturation voltage
VCE(sat)**
IC = 0.5 A, IB = 0.5 mA
1.5
V
Base saturation voltage
VBE(sat)**
IC = 0.5 A, IB = 0.5 mA
2.0
V
Turn-on time
tON
0.5
s
Storage time
tstg
1.0
s
Fall time
tf
IC = 0.5 A, RL = 100
IB1 =
IB2 = 0.1 mA, VCC = 50 V
1.0
s
* *Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
2000 to 5000
4000 to 10000
8000 to 30000
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