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参数资料
| 型号： | 2SD1857-R-T92-B |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 34K |
| 代理商： | 2SD1857-R-T92-B |
2SD1857
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 2
www.unisonic.com.tw
QW-R201-057,C
ABSOLUTE MAXIMUM RATING (Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5
V
Collector Power Dissipation
PC
1
W
Collector Current
IC
2
A
Collector Current
ICP
3
A
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=50A
120
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA
120
V
Emitter-Base Breakdown Voltage
BVEBO
IE=50A
5
V
Collector Cut-off Current
ICBO
VCB=100V
1
A
Emitter Cut-off Current
IEBO
VEB=4V
1
A
DC Current Transfer Ratio
hFE
VCE=5V, IC=0.1A
82
390
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=/IB=1A/0.1A(Note)
0.4
V
Transition Frequency
fT
VCE=5V, IE= -0.1A, f=30MHz.
80
MHz
Output Capacitance
Cob
VCB=10V, IE=0A, f=1MHz(Note)
20
pF
Note Measured using pulse current.
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82-180
120-270
180-390
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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相关代理商/技术参数 |
参数描述 |
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| 2SD1857TV2P | 功能描述:两极晶体管 - BJT DVR NPN 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1857TV2Q | 功能描述:两极晶体管 - BJT DVR NPN 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1857TV2R | 功能描述:两极晶体管 - BJT DVR NPN 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1858 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTORSUB P-2SD1858R |
| 2SD1858R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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