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参数资料
| 型号： | 2SD1857ATV2/Q |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ATV, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 136K |
| 代理商： | 2SD1857ATV2/Q |
2SD2211 / 2SD1918 / 2SD1857A
Transistors
Rev.A
1/3
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
Features
1) High breakdown voltage.(BVCEO
= 160V)
2) Low collector output capacitance.
(Typ. 20pF at VCB
= 10V)
3) High transition frequency.(fT
= 80MHZ)
4) Complements the 2SB1275 / 2SB1236A.
Absolute maximum ratings (Ta = 25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
160
5
1.5
1
0.5
2
150
55 +150
Unit
V
A(DC)
3
2
3
1
A(Pulse)
W
1
10
W(Tc
=25°C)
2SD1857A
2SD2211
2SD1918
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
1 Pw
=200msec duty=1/2
2
Printed circuit board 1.7mm thick, collector plating 1cm
2 or larger.
3
When mounted on a 40 x 40 x 0.7mm ceramic board.
Packaging specifications and hFE
Type
2SD2211
MPT3
QR
T100
1000
2SD1918
CPT3
QR
TL
2500
2SD1857A
ATV
PQ
TV2
2500
DQ*
Denotes hFE
Package
hFE
Code
Basic ordering unit (pieces)
Marking
*
External dimensions (Unit : mm)
ROHM : MPT3
EIAJ : SC-62
EIAJ : SC-63
ROHM : CPT3
ROHM : ATV
2SD1857A
2SD1918
2SD2211
1.5
(1) Base(Gate)
0.4
(2) Collector(Drain)
(3) Emitter(Source)
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
0.45
(2) Collector
1.05
(3) Base
Taping specifications
(1) Emitter
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
( 2
)
( 3
)
C0.5
0.65
0.9
( 1
)
0.75
2.3
0.9
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
5.1
Electrical characteristics (Ta = 25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
160
5
120
80
20
1
2
390
V
A
V
hFE
82
270
2SD2211,2SD1918
2SD1857A
MHz
pF
IC
= 50
A
IC
= 1mA
IE
= 50
A
VCB
= 120V
VEB
= 4V
IC/IB
= 1A/0.1A
VBE(sat)
1.5
V
IC/IB
= 1A/0.1A
VCE/IC
= 5V/0.1A
VCE
= 5V , IE = 0.1A , f = 30MHz
VCB
= 10V , IE = 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
Measured using pulse current.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1857TV2P | 功能描述:两极晶体管 - BJT DVR NPN 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1857TV2Q | 功能描述:两极晶体管 - BJT DVR NPN 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1857TV2R | 功能描述:两极晶体管 - BJT DVR NPN 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1858 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTORSUB P-2SD1858R |
| 2SD1858R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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