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参数资料
| 型号： | 2SD1859TV2Q |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 700 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ATV, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 69K |
| 代理商： | 2SD1859TV2Q |
2SD1767 / 2SD1859
Transistors
Rev.A
1/2
Medium power transistor (80V, 0.7A)
2SD1767 / 2SD1859
Features
1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A.
2) Complements the 2SB1189 / 2SB1238.
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
80
5
0.7
2
1
150
55 to +150
Unit
V
A(DC)
1
A(Pulse)
0.5
3
2
1
2SD1859
2SD1767
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
1 Pw=10ms, duty=1/2
2 When mounted on a 40×40×0.7 mm ceramic board.
3 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
Packaging specifications and hFE
Type
2SD1767
MPT3
PQR
DC
T100
1000
2SD1859
ATV
QR
TV2
2500
Denotes hFE
Package
hFE
Marking
Code
Basic ordering unit (pieces)
External dimensions (Unit : mm)
(1) Emitter
(2) Collector
(3) Base
0.45
1.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2SD1767
ROHM : MPT3
EIAJ : SC-62
2SD1859
ROHM : ATV
(1) Base
(2) Collector
(3) Emitter
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
80
5
0.2
120
10
0.5
0.4
V
A
V
MHz
pF
IC
=50A
IC
=2mA
IE
=50A
VCB
=50V
VEB
=4V
hFE
120
390
VCE/IC
=3V/0.1A
IC/IB
=500mA/50mA
VCE
=10V, IE=50mA, f=100MHz
VCB
=10V, IE=0A, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1767T100P | 700 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1859TV2/Q | 700 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1865TV2/Q | 1000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1865TV2/R | 1000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1865TV2Q | 1000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1859TV2R | 功能描述:两极晶体管 - BJT DRIVER NPN 80V 0.7A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1860 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR ATV50V .5A .6W ECB |
| 2SD1861TV2 | 功能描述:达林顿晶体管 DARL NPN 40V 2A RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2SD1862 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1862PRTV6 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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