参数资料
型号: 2SD1866TV2
元件分类: 小信号晶体管
英文描述: 2000 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: ATV, 3 PIN
文件页数: 1/4页
文件大小: 165K
代理商: 2SD1866TV2
1/3
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
2009.11 - Rev.B
Medium Power Transistor
(Motor, Relay drive) (60
±10V, 2A)
2SD2143 / 2SD1866
Features
Dimensions (Unit : mm)
1) Built-in zener diode between collector and base.
2) Strong protection against reverse surges due to "L"
loads.
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
Absolute maximum ratings (Ta=25
°C)
1 Single pulse Pw=100ms
2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Junction temperature
Collector power
dissipation
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
60
±10
60
±10
6
2
10
1
2
150
55 to +150
Unit
V
A (DC)
3
A (Pulse)
1
W
W (Tc
=25°C)
°C
2SD2143
2SD1866
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Storage temperature
Packaging specifications and hFE
Type
2SD2143
CPT3
1k to 10k
TL
2500
2SD1866
ATV
1k to 10k
TV2
2500
Basic ordering unit (pieces)
Package
hFE
Code
Marking
Inner circuit
R2
R1
E :
B :
C :
C
B
E
Emitter
Base
Collector
R1
3.5k
R2
300
Electrical characteristics (Ta=25
°C)
Measured using pulse current.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
ICBO
IEBO
VCE(sat)
hFE
Cob
50
1000
25
80
70
1.0
3
1.5
10000
V
A
mA
V
pF
IC
=50A
IC
=5mA
VCB
=40V
VEB
=5V
IC/IB
=1A/1mA
VCE
=2V, IC=1A
VCE
=5V, IE= 0.1A, f=30MHz
VCB
=10V, IE=0A, f=1MHz
fT
MHz
2SD2143
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
( 2
)
( 3
)
C0.5
0.65
0.9
( 1
)
0.75
2.3
0.9
1.5
5.5
5.1
2SD1866
(2) Collector
(1) Emitter
ROHM : ATV
Taping specifications
(3) Base
0.45
1.05
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
相关PDF资料
PDF描述
2SD2150T100QR 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2150T100Q 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2150T100QS 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2153T100/E 2000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2153T100/EU 2000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SD1867 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR ATV100V 1.5A 1W ECB
2SD1867TV2 功能描述:达林顿晶体管 DARL NPN 100V 2A RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
2SD1876 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SD1879 制造商:SANY 功能描述:
2SD188 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR TO-3 100V 7A 60W BEC 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR