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参数资料
| 型号： | 2SD1898 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 586K |
| 代理商： | 2SD1898 |
2SD1898
NPN Silicon
Power Transistors
Features
High VCEO, VCEO=80V
High IC, IC=1.0A(DC)
Good hFElinearity
Maximum Ratings
Symbol
Rating
Value
Unit
VCEO
Collector-Emitter Voltage
100
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current, DC
Pulse
(1)
1.0
2.0
A
PC
Collector Power Dissipation
(2)
0.5
2.0
W
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25
°C Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
VCEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc)
80
---
Vdc
VCBO
Collector-Base Breakdow n Voltage
(IC=50uAdc)
100
---
Vdc
VEBO
Emitter-Base Breakdown Voltage
(IE=50uAdc)
5.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=80Vdc)
---
1.0
uAdc
IEBO
Emitter Cutoff Current
(VEB=4.0Vdc, IC=0)
---
1.0
uAdc
hFE
DC Current Transfer Ratio
(3)
(VCE=3.0Vdc, IC=0.5Adc)
82
---
390
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC/IB=500mA/20mA)
---
0.15
0.4
Vdc
fT
Transition Frequency
(VCE=10Vdc, IE=50mAdc,
f=100MHz)
---
100
---
MHz
Cob
Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz)
---
20
---
pF
(1) Pw=20ms, duty=1/2
(2) When mounted on a 40x40x0.7mm ceramic board.
(3) Measured using pulse current
SOT-89
B
A
E
D
G
H
F
K
J
C
1
2
3
1. OUT
2. GND
3. IN
Revision: 3
2006/05/14
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
TM
Micro Commercial Components
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Marking:DF
www.mccsemi.com
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相关代理商/技术参数 |
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| 2SD1898T100 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD1898T100P | 功能描述:两极晶体管 - BJT DVR NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1898T100Q | 功能描述:两极晶体管 - BJT NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1898T100R | 功能描述:两极晶体管 - BJT NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1899-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,3.0A,TO-252 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 3A 2-Pin(2+Tab) TO-252 |
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