参数资料
型号: 2SD1903R
元件分类: 功率晶体管
英文描述: 8 A, 30 V, NPN, Si, POWER TRANSISTOR
封装: TO-220MF, 3 PIN
文件页数: 1/4页
文件大小: 37K
代理商: 2SD1903R
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
30V/8A High-Current Switching Applications
Ordering number:ENN2263A
2SB1267/2SD1903
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11504TN (KT)/O1598HA (KT)/D251MH/5137TA, TS No.2263–1/4
Package Dimensions
unit:mm
2049C
[2SB1267/2SD1903]
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220MF
Applications
Suitable for relay drivers, high-speed inverters,
converters and other general high-current switching.
Features
Suitable for sets whose height is restricted.
Low collector to emitter saturation voltage :
VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.
Large current capacity.
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* : The 2SB1267/2SD1903 are classified by 1A hFE as follows :
Continued on next page.
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( ) : 2SB1267
Specifications
Absolute Maximum Ratings at Ta = 25C
10.2
20.9
11.5
9.4
0.8
1.6
1.2
0.9
11.0
8.8
4.5
1.3
0.4
2.55
2.7
12
3
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