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参数资料
| 型号： | 2SD1949T106/Q |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | UMT3, 3 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 106K |
| 代理商： | 2SD1949T106/Q |
Data Sheet PU10353EJ02V0DS
3
2SC5843
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
20
5
10
15
25
30
35
01
2
3
40 A
70 A
100 A
130 A
160 A
190 A
IB = 10 A
f = 1 MHz
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.3
0.2
0.1
0
48
6
210
VCE = 1 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.6
0.5
0.4
0.7
0.8
0.9
1.0
VCE = 2 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.6
0.5
0.4
0.7
0.8
0.9
1.0
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
250
200
150
80
100
50
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Remark The graphs indicate nominal characteristics.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1949T106R | 功能描述:两极晶体管 - BJT NPN 50V 0.5A SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1950 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-6230V 2A .4W ECB SURFACE MOUNT |
| 2SD1950-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:NPN TRANSISTOR 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,25V,2A,P-MINIMOLD3 制造商:Renesas 功能描述:Trans GP BJT NPN 25V 2A 4-Pin(3+Tab) Power Mini-Mold |
| 2SD1950-T1-AZ(VK) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD1950-T1-AZ(VL) | 制造商:Renesas Electronics 功能描述:NPN |
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