- 您现在的位置：买卖IC网 > PDF目录33434 > 2SD2029P (PANASONIC CORP) 12 A, 160 V, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SD2029P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TOP-3L-A1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 211K |
| 代理商： | 2SD2029P |
Power Transistors
1
Publication date: September 2003
SJD00240BED
2SD2029
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1347
■ Features
Excellent collector current I
C characteristics of forward current
transfer ratio hFE
Wide safe operaiton area
High transition frequency f
T
Optimum for the output stage of a Hi-Fi audio amplifier
■ Absolute Maximum Ratings T
C = 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Base-emitter voltage
VBE
VCE = 5 V, IC = 8 A
1.8
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 160 V, I
E
= 050
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 3 V, IC = 050
A
Forward current transfer ratio
hFE1
VCE = 5 V, IC = 20 mA
20
hFE2 *
VCE
= 5 V, I
C
= 1 A
60
200
hFE3
VCE = 5 V, IC = 8 A
20
Collector-emitter saturation voltage
VCE(sat)
IC = 8 A, IB = 0.8 A
2.0
V
Transition frequency
fT
VCE
= 5 V, I
C
= 0.5 A, f = 1 MHz
20
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
210
pF
(Common base, input open circuited)
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
160
V
Collector-emitter voltage (Base open)
VCEO
160
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
12
A
Peak collector current
ICP
20
A
Collector power
PC
120
W
dissipation
Ta = 25°C
3.5
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
S
P
hFE2
60 to 120
80 to 160
100 to 200
20.0±0.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
123
26.0
±
0.5
(10.0)
(2.5)
Solder
Dip
(6.0)
(4.0)
(2.0)
(1.5)
20.0
±
0.5
5.0±0.3
φ 3.3±0.2
(1.5)
2.7±0.3
0.6±0.2
(3.0)
(2.0)
1: Base
2: Collector
3: Emitter
TOP-3L-A1 Package
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD2033AT114/D | 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 2SD2033AT114D | 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 2SD2033AT114/E | 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 2SD2033AT114 | 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 2SD2038T114E | 5 A, 60 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2029Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 12A I(C) | TO-264 |
| 2SD2029S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 12A I(C) | TO-264 |
| 2SD203 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 130V 6A 50W BEC |
| 2SD2030 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
发布紧急采购，3分钟左右您将得到回复。