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参数资料
| 型号： | 2SD2030 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 173K |
| 代理商： | 2SD2030 |
Power Transistors
1
Publication date: February 2003
SJD00003BED
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1847
■ Features
Output of 4 W can be obtained by a complementary pair with
2SC1847
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC =
1 mA, I
E = 0
50
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
40
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 10 V, I
B
= 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
10
A
Forward current transfer ratio *
hFE
VCE = 5 V, IC = 1 A
80
220
Collector-emitter saturation voltage
VCE(sat)
IC
= 1.5 A, I
B
= 0.15 A
1.0
V
Base-emitter saturation voltage
VBE(sat)
IC = 2 A, IB = 0.2 A
1.5
V
Transition frequency
fT
VCB = 5 V, IE = 0.5 A, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB =
20 V, I
E = 0, f = 1 MHz
45
pF
(Common base, input open circuited)
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
40
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1.5
A
Peak collector current
ICP
3A
Collector power dissipation
PC
1.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Note) The part numbers in the parenthesis show conventional part number.
Rank
Q
R
hFE1
80 to 160
120 to 220
8.0
+0.5
–0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1
1.76±0.1
123
φ 3.16±0.1
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD2030C | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2031 | 100 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2031C | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2031-B | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2031 | SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2030B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SD2030C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SD2031 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SD2031B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-92 |
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