参数资料
型号: 2SD2079
元件分类: 功率晶体管
英文描述: 5 A, 100 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-10R1A, SC-67, 3 PIN
文件页数: 1/5页
文件大小: 145K
代理商: 2SD2079
2SD2079
2006-11-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2079
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
High DC current gain: hFE (1) = 2000 (min)
Low saturation voltage: VCE (sat) (1) = 1.5 V (max)
Complementary to 2SB1381.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
7
V
DC
IC
5
Collector current
Pulse
ICP
8
A
Base current
IB
0.5
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
30
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Base
Emitter
≈ 5 k
≈ 150
Collector
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