参数资料
型号: 2SD2092
元件分类: 功率晶体管
英文描述: 3 A, 100 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-10R1A, SC-67, 3 PIN
文件页数: 4/5页
文件大小: 166K
代理商: 2SD2092
2SD2092
2006-11-21
4
Collector current IC (A)
VCE (sat) – IC
Colle
ctor-emi
tter
sa
tura
tion
vol
tage
V
CE
(sat)
(V)
Base-emitter voltage VBE (V)
IC – VBE
Colle
ct
or
curr
ent
I C
(A
)
Collector current IC (A)
VBE (sat) – IC
Base-em
itt
er
sa
tura
tion
vol
tage
V
BE
(sat)
(V)
0.1
0.05
Common emitter
IC/IB = 100
0.1
0.3
0.5
1
3
0.3
0.5
1
3
5
100
25
Tc = 55°C
0.03
0.05
Common emitter
IC/IB = 100
0.3
0.5
1
3
5
10
0.05
0.1
0.3
1
3
55
25
Tc = 100°C
0.1
0.5
0
0.5
1.5
2.5
3.0
0.4
0.8
1.2
1.4
1.6
Common emitter
VCE = 1 V
55
25
Tc = 100°C
1.0
0.6
0.2
1.0
2.0
Pulse width tw (s)
rth – tw
T
ransie
nt
th
ermal
r
esi
st
an
ce
r th
(
°C
/W
)
0.001
1000
10
100
0.01
0.1
30
0.3
3
1
100
10
1
Curves should be applied in thermal limited area.
(Single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
(1)
(2)
Collector-emitter voltage VCE (V)
Safe Operating Area
Colle
ct
or
curr
ent
I C
(A
)
0.03
2
5
10
30
50
100
200
0.05
0.1
0.3
0.5
1
3
5
10
10 ms*
100 ms*
1 ms*
VCEO max
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
100 μs*
IC max (pulsed)*
IC max
(continuous)
DC operation
Tc = 25°C
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