参数资料
型号: 2SD2104
元件分类: 功率晶体管
英文描述: 8 A, 120 V, NPN, Si, POWER TRANSISTOR
封装: TO-220FM, 3 PIN
文件页数: 2/6页
文件大小: 31K
代理商: 2SD2104
2SD2104
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
120
V
Collector to emitter voltage
V
CEO
120
V
Emitter to base voltage
V
EBO
7V
Collector current
I
C
8A
Collector peak current
I
C(peak)
12
A
Collector power dissipation
P
C
2W
P
C*
1
25
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
120
V
I
C = 0.1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
120
V
I
C = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7—
V
I
E = 50 mA, IC = 0
Collector cutoff current
I
CBO
——
10
AV
CB = 100 V, IE = 0
I
CEO
10
V
CE = 100 V, RBE = ∞
DC current transfer ratio
h
FE
1000
20000
V
CE = 3 V, IC = 4 A*
1
Collector to emitter saturation
V
CE(sat)1
1.5
V
I
C = 4 A, IB = 8 mA*
1
voltage
V
CE(sat)2
3.0
I
C = 8 A, IB = 80 mA*
1
Base to emitter saturation
V
BE(sat)1
2.0
V
I
C = 4 A, IB = 8 mA*
1
voltage
V
BE(sat)2
3.5
I
C = 8 A, IB = 80 mA*
1
Note:
1. Pulse test.
相关PDF资料
PDF描述
2SD2104 8 A, 120 V, NPN, Si, POWER TRANSISTOR
2SD2106 6 A, 120 V, NPN, Si, POWER TRANSISTOR
2SD2107B 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD2107 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD2107C 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
相关代理商/技术参数
参数描述
2SD2105 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Darlington Power Transistor
2SD2106 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Darlington Power Transistor
2SD2107 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor
2SD2107B 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-220FN
2SD2107C 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-220FN