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参数资料
| 型号： | 2SD2112 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 6 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-220FM, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 34K |
| 代理商： | 2SD2112 |
2SD2112
3
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
P
C
(W)
20
10
5
2
0.2
0.5
1.0
Collector
current
I
C
(A)
0.1
0.05
0.02
330
10
100
300
Collector to emitter voltage VCE (V)
Ta = 25
°C
1 shot pulse
1
s
PW
=
10
ms
1
ms
100
s
Area of Safe Operation
DC
Operation
(T
C =
25
°C)
iC(peak)
IC(max)
TC = 25°C
IB = 0
10
8
6
4
2
01
Collector
current
I
C
(A)
2
Collector to emitter voltage VCE (V)
35
4
Typical Output Characteristics
0.5 mA
1.0
3.0
1.5
2.5
2.0
30,000
10,000
300
3,000
1,000
100
30
0.1
0.3
DC
current
transfer
ratio
h
FE
1.0
Collector current IC (A)
310
T C
= 75
°C
–25
°C
25°
C
VCE = 3 V
DC Current Transfer Ratio
vs. Collector Current
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2113 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| 2SD2114 | 制造商:HTSEMI 制造商全称:Shenzhen Jin Yu Semiconductor Co., Ltd. 功能描述:TRANSISTOR (NPN) |
| 2SD2114_11 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic-Encapsulate Transistor |
| 2SD2114K | 制造商:ROHM 制造商全称:Rohm 功能描述:High-current Gain MediumPower Transistor (20V, 0.5A) |
| 2SD2114K_1 | 制造商:ROHM 制造商全称:Rohm 功能描述:High-current Gain Medium Power Transistor (20V, 0.5A) |
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