参数资料
型号: 2SD2121S
元件分类: 小信号晶体管
英文描述: 2500 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: DPAK-3
文件页数: 5/8页
文件大小: 165K
代理商: 2SD2121S
2SD2121(L)/(S)
Silicon NPN Epitaxial
ADE-208-925 (Z)
1st. Edition
September 2000
Application
Low frequency power amplifier complementary pair with 2SB1407(L)/(S)
Outline
4
12
3
4
3
2
1
1. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
35
V
Collector to emitter voltage
V
CEO
35
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
2.5
A
Collector peak current
I
C(peak)
3A
Collector power dissipation
P
C*
1
18
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
相关PDF资料
PDF描述
2SD2121SC 2500 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2121LB 2500 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2124(L) POWER TRANSISTOR
2SD2124(S) POWER TRANSISTOR
2SD2124(L) POWER TRANSISTOR
相关代理商/技术参数
参数描述
2SD2122 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial
2SD2122(L) 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-251AA
2SD2122(L)-(1)B 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT
2SD2122(L)-(1)C 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT