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参数资料
| 型号： | 2SD2124(L) |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER TRANSISTOR |
| 封装： | DPAK-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 33K |
| 代理商： | 2SD2124(L) |
2SD2124(L)/(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
120
V
Collector to emitter voltage
V
CEO
120
V
Emitter to base voltage
V
EBO
7V
Collector current
I
C
1.5
A
Collector peak current
I
C(peak)
3.0
A
Collector power dissipation
P
C*
1
18
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
C to E diode forward current
I
D*
1
1.5
A
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
120
—
V
I
C = 0.1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
120
—
V
I
C = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
V
I
E = 50 mA, IC = 0
Collector cutoff current
I
CBO
——
10
AV
CB = 100 V, IE = 0
I
CEO
—
10
V
CE = 100 V, RBE = ∞
DC current transfer ratio
h
FE
2000
—
30000
V
CE = 3 V, IC = 1 A*
1
Collector to emitter saturation
V
CE(sat)
—
1.5
V
I
C = 1 A, IB = 1 mA*
1
voltage
V
CE(sat)
—
2.0
I
C = 1.5 A, IB = 1.5 mA*
1
Base to emitter saturation
V
BE(sat)
—
2.0
V
I
C = 1 A, IB = 1 mA*
1
voltage
V
BE(sat)
—
2.5
I
C = 1.5 A, IB = 1.5 mA*
1
C to E diode forward voltage
V
D
—
3.0
V
I
D = 1.5 A*
1
Turn on time
t
on
—
0.5
—
sI
C = 1 A, IB1 = –IB2 = 1 mA
Turn off time
t
off
—
2.0
—
s
Note:
1. Pulse test.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2124S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SD2125 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN TRANSISTOR |
| 2SD2126 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | SOT-89 |
| 2SD2127 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (SWITCHIN, LAMP, SOLENOID DRIVE APPLICATIONS) |
| 2SD2128 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Darlington Power Transistor |
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