参数资料
型号: 2SD2136G-Q-T60-K
厂商: UNISONIC TECHNOLOGIES CO LTD
元件分类: 功率晶体管
英文描述: 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
封装: HALOGEN FREE PACKAGE-3
文件页数: 2/4页
文件大小: 164K
代理商: 2SD2136G-Q-T60-K
2SD2136
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R204-011.C
ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
3
A
Peak Collector Current
ICP
5
A
Collector Dissipation
PC
1.5
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified )
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCEO
IC=30mA, IB=0
60
V
Collect Cutoff Current
ICEO
VCE=60V, IB=0
300
A
Collect Cutoff Current
ICES
VCE=60 V, VBE=0
200
A
Emitter Cutoff Current
IEBO
VBE=6 V, IC=0
1
mA
hFE1
VCE=4V ,IC=1A
40
250
DC Current Gain
hFE2
VCE=4V ,IC=3A
10
Collector-Emitter Saturation Voltage
VCE(SAT)
IC =3A, IB=0.375A
1.2
V
Base-Emitter Voltage
VBE
VCE=4V ,IC=3A
1.8
V
Current Gain Bandwidth Product
fT
VCE=15V, IE=0.1A, f =200MHz
220
MHZ
Turn On Time
tON
0.5
S
Storage Time
tS
2.5
S
Fall Time
tF
IC = 1A, IB1 =0.1A, IB2 =0.1A
0.4
S
CLASSIFICATION OF hFE1
RANK
P
Q
R
RANGE
40-90
70-150
120-250
相关PDF资料
PDF描述
2SD2136L-R-T6C-K 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
2SD2136L-R-T60-K 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
2SD2136L-Q-T60-K 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
2SD2137PQ 3 A, 60 V, NPN, Si, POWER TRANSISTOR
2SD2137Q 3 A, 60 V, NPN, Si, POWER TRANSISTOR
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2SD2136P 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-221VAR