- 您现在的位置：买卖IC网 > PDF目录48159 > 2SD2167T100/N Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SD2167T100/N |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/1页 |
| 文件大小： | 54K |
| 代理商： | 2SD2167T100/N |
2SD2167
Transistors
1/1
Power Transistor (31
±4V, 2A)
2SD2167
!
Features
1) Built-in zener diode between collector and base.
2) Zener diode has low voltage dispersion.
3) Strong protection against reverse power surges due
to low loads.
4) PC
=2 W (on 40×40×0.7mm ceramic board)
!
External dimensions (Units : mm)
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
ROHM : MPT3
!
Absolute maximum ratings (Ta = 25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
31
±4
31
±4
5
2
0.5
2
150
55 +150
Unit
V
A(DC)
3
2
1
A(Pulse)
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 Pw
=20ms , duty=1 / 2
2 When mounted on a 40
× 40 × 0.7 mm ceramic board.
!
Packaging specifications and hFE
Type
2SD2167
MPT3
NPQ
T100
DL
1000
Package
hFE
Code
Basic ordering unit (pieces)
Marking
Denotes hFE
!
Electrical characteristics (Ta = 25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
27
5
56
100
25
35
1
270
V
A
V
MHz
pF
IC
= 50A
IC
= 1mA
IE
= 50A
VCB
= 20V
VEB
= 5V
IC/IB
= 2A/0.2A
0.25
0.5
V
IC/IB
= 1A/50mA
VCE/IC
= 3V/0.5A
VCE
= 3V , IE = 0.5A , f= 30MHz
VCB
= 10V , IE = 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD2185S | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2210G | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2210GS | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2276P | 8 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 2SD2276Q | 8 A, 140 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2167T100P | 功能描述:两极晶体管 - BJT DVR NPN 31V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2167T100Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 31V V(BR)CEO | 2A I(C) | SOT-89 |
| 2SD2168 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 31V V(BR)CEO | 3A I(C) | SC-71 |
| 2SD2168P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 31V V(BR)CEO | 3A I(C) | SC-71 |
| 2SD2168Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 31V V(BR)CEO | 3A I(C) | SC-71 |
发布紧急采购，3分钟左右您将得到回复。