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参数资料
| 型号： | 2SD2215AQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.75 A, 300 V, NPN, Si, POWER TRANSISTOR |
| 封装： | IPAK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 168K |
| 代理商： | 2SD2215AQ |
1
Power Transistors
2SD2215, 2SD2215A
Silicon NPN triple diffusion planar type
For power amplification
s Features
q
High collector to base voltage VCBO
q
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
350
400
250
300
5
1.5
0.75
15
1.3
150
–55 to +150
Unit
V
A
W
C
2SD2215
2SD2215A
2SD2215
2SD2215A
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICES
ICEO
IEBO
VCEO
hFE1
*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
Conditions
VCE = 350V, VBE = 0
VCE = 400V, VBE = 0
VCE = 150V, IB = 0
VCE = 200V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 10V, IC = 0.3A
VCE = 10V, IC = 1A
IC = 1A, IB = 0.2A
VCE = 5V, IC = 0.5A, f = 10MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
min
250
300
70
10
typ
30
0.5
2
0.5
max
1
250
1.5
1
Unit
mA
V
MHz
s
2SD2215
2SD2215A
2SD2215
2SD2215A
2SD2215
2SD2215A
*h
FE1 Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package (Y)
7.2
±0.3
7.0
±0.3
3.0
±0.2
3.5
±0.2
10.0
+0.3
–0.
0.8
±0.2
1.0
±0.2
4.6
±0.4
2
13
1.1
±0.1
0.75
±0.1
2.3
±0.2
0.85
±0.1
0.4
±0.1
7.0
±0.3
0.75
±0.1
2.3
±0.2
4.6
±0.4
1.1
±0.1
10.2
±0.3
7.2
±0.3
2.0
±0.2
0.9
±0.1
3.5
±0.2
2.5
±0.2
1.0
2.5
±0.2
3.0
±0.2
1.0
max.
123
0 to 0.15
2.5
0.5 max.
Ma
int
en
an
ce
/
Dis
co
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nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD2215AP | 0.75 A, 300 V, NPN, Si, POWER TRANSISTOR |
| 2SD2215P | 0.75 A, 250 V, NPN, Si, POWER TRANSISTOR |
| 2SD2215Q | 0.75 A, 250 V, NPN, Si, POWER TRANSISTOR |
| 2SD2216JQ | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2216JR | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2215P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 750MA I(C) | TO-251VAR |
| 2SD2215Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 750MA I(C) | TO-251VAR |
| 2SD2216 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD2216G0L | 功能描述:TRANS NPN 50VCEO 100MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD2216J | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:SILICON NPN EPITAXIAL PLANAR TYPE |
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