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参数资料
| 型号： | 2SD2216R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SSMINI3-G1, SC-75, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 194K |
| 代理商： | 2SD2216R |
Transistors
1
Publication date: January 2003
SJC00248BED
2SD2216
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1462
■ Features
High forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 060
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 050
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 07
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 20 V, I
E
= 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 10 V, IB = 0
100
A
Forward current transfer ratio
hFE1 *
2
VCE = 10 V, IC = 2 mA
160
460
hFE2 *
1
VCE = 2 V, IC = 100 mA
90
Collector-emitter saturation voltage
VCE(sat)
IC = 100 mA, IB = 10 mA
0.1
0.3
V
Transition frequency
fT
VCB = 10 V, IE = 2 mA, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1.6
±
0.15
1.6±0.1
5
1
1.0±0.1
0.75
±
0.15
0.45
±
0.1
0
to
0.1
(0.5)
(0.3)
(0.5)
0.8
±
0.1
(0.4)
0.15
+0.1
–0.05
0.2
+0.1
–0.05
1
2
3
0.2
±
0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
No rank
hFE1
160 to 260
210 to 340
290 to 460
160 to 460
Product of no-rank is not classified and have no marking symbol for rank.
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SSMini3-G1 Package
Marking Symbol: Y
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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相关代理商/技术参数 |
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| 2SD2217 | 制造商:NEC 制造商全称:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
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| 2SD2218Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-220VAR |
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