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参数资料
| 型号： | 2SD2220 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon NPN triple diffusion planar type Darlington(For low-frequency amplification) |
| 中文描述： | 1 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, MT-3-A1, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 39K |
| 代理商： | 2SD2220 |
1
Power Transistors
2SD2220
Silicon NPN triple diffusion planar type Darlington
For low-frequency amplification
I
Features
G
Suitable for the driver circuit of a motor, a printer hammer and
like that, since this transistor is designed for the high forward
current transfer ratio h
FE
G
A shunt resistor is omitted from the driver
G
Allowing supply with the radial taping
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (T
C
=25
°
C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
100
80
5
1.5
1
1.5
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 1A
I
C
= 1A, I
B
= 1mA
I
C
= 1A, I
B
= 1mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
min
100
80
5
4000
typ
150
max
100
100
20000
1.8
2.2
Unit
nA
nA
V
V
V
V
V
MHz
*
h
FE
Rank classification
Rank
Q
R
h
FE
4000 to 10000 8000 to 20000
Unit: mm
Internal Connection
1:Emitter
2:Collector
3:Base
MT3 Type Package
7.5
±
0.2
4.5
±
0.2
90
°
0.8C
0.8C
0.4
±
0.1
0.8C
1
2
3
0.5
±
0.1
0.7
±
0.1
1.0
±
0.1
0.85
±
0.1
0.65
±
0.1
0.7
±
0.1
2
±
0
1
±
0
1
±
1
3
±
0
2.5
±
0.2
2.5
±
0.2
2.05
±
0.2
B
E
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD22200RA | 功能描述:TRANS NPN 80VCEO 1A MT-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD2220Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1A I(C) | TO-126VAR |
| 2SD2220R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1A I(C) | TO-126VAR |
| 2SD2221 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SD2222 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
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