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参数资料
| 型号： | 2SD2223 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220MF, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 46K |
| 代理商： | 2SD2223 |
2SB1471 / 2SD2223
No.3365-1/5
Applications
Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.
Features
Suitable for sets whose height is restricted.
High DC current gain.
Large current capacity and wide ASO.
Specifications ( ) : 2SB1471
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)70
V
Collector-to-Emitter Voltage
VCEO
(--)60
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)4
A
Collector Current (Pulse)
ICP
(--)6
A
Collector Dissipation
PC
1.65
W
Tc=25
°C30
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(--)5V, IC=0A
(--)3.0
mA
DC Current Gain
hFE
VCE=(--)2V, IC=(--)2A
2000
5000
Gain-Bandwidth Product
fT
VCE=(--)5V, IC=(--)2A
20
MHz
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)2A, IB=(--)4mA
(--1.0)0.9
(--)1.5
V
Base-to-Emitterr Saturation Voltage
VBE(sat)
IC=(--)2A, IB=(--)4mA
(--)2.0
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)5mA, IE=0A
(--)70
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)50mA, RBE=∞
(--)60
V
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN3365A
83006IA MS IM TC-0000041 / O2098HA (KT) / N120MH, JK(KOTO)
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SB1471 / 2SD2223
PNP / NPN Epitaxial Planar Silicon Darlington Transistors
Driver Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD2227STP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2226KT146 | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2228D43-A | 500 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2228D43 | 500 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2228D43-T1 | 500 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2224 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Driver Applications |
| 2SD2225 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For low-frequency amplification) |
| 2SD22250RA | 功能描述:TRANS NPN 120VCEO 500MA MT-2 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD2225Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 500MA I(C) | SC-71 |
| 2SD2225R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 500MA I(C) | SC-71 |
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